OPM150x2.0IGA

The OPM150x2.0IGA is a small area InGaAs photodiode detector head, compatible with the OPM150 series of optical power meter. The special design of the material gives high sensitivity up to 2000nm. This extends significantly beyond the range of standard InGaAs materials. The head mechanics are desig ...Read more

ORDER CODE: 30.070.00055

The OPM150x2.0IGA is a small area InGaAs
photodiode detector head, compatible with the
OPM150 series of optical power meter. The
special design of the material gives high
sensitivity up to 2000nm.


CHARACTERISTICS

Wavelength range: 800-2000nm
Sensitive area: ø3mm
Minimum measureable power: 0.6nW (at 1100nm)
Maximum measureable power: 15mW (at 1100nm)
Maximum outer dimensions: ø30mm x 30mm



The OPM150x2.0IGA is a small area InGaAs photodiode detector head, compatible with the OPM150 series of optical power meter. The special design of the material gives high sensitivity up to 2000nm. This extends significantly beyond the range of standard InGaAs materials.

The head mechanics are designed to be compatible with various common optomechanics systems to allow simple integration. Various adapters for tube systems, camera objectives and optical fibres are available to further enhance the ease of integration.

When connected to the OPM150 base unit, each head is automatically recognized and its individual calibration data are uploaded to the system. In addition, the user may load upto 5 separate filter curves. Thus, the dynamic range and functionality of the unit can be expanded while ensuring proper calibration.

- Calibrated absorbing attenuators: OD1, OD2, OD3

- Calibrated diffuse reflecting attenuators: OD1, OD2, OD3

- Adapters for tube systems

- Adapters for fibre inputs: FC, SMA, ø1.25 ferrule

Why choose InGaAs over Germanium?

The choice of detector is affected by several parameters: beam size, power and wavelength. In general a photodiode will give best results when used at wavelegth below the wavelegth of peak sensitivity. Although the head may operate at higher wavelengths, the sensitivity of the photodiode will be strongly temperature dependent. Thus, for wavelengths beyond 1550nm, InGaAs will be the material of choice.

Also, at wavelength below 800nm, our visible enhance InGaAs exhibits markedly higher responsivity than Germanium.

On the downside, large area InGaAs detectors are prohibitively expensive. Thus, this material is generally limited to ø3mm sensitive area.

- Wavelength range: 800-2000nm

- Sensitive area: ø3mm

- Minimum measureable power: 0.6nW (at 1100nm)

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Maximum measureable power: 15mW (at 1100nm)

- Maximum outer dimensions: ø30mm x 30mm